Effect of parameter variations on the performance of GaAs/AlGaAs multiple-quantum-well electroabsorption modulators

Author

Cho, Hung-Sik ; Prucnal, PAul R.

Author_Institution

Center for Telecommun. Res., Columbia Univ., New York, NY, USA

Volume

25

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

1682

Lastpage

1690

Abstract

A theoretical investigation is presented of the dependence of electroabsorption in GaAs/Al_xGa_1-xAs multiple-quantum-well (MQW) structures on the MQW parameters (Al mole fraction x, well thickness L_z barrier thickness L_b and interface quality) and on the applied electric field studied. The on/off ratio of a modulator using MQWs with x=0.45, L_z=75 Å, and L _b=78 Å is predicted to increase by 20% compared to that of a modulator using MQWs with x=0.3, L_z=100 Å, and L_b=100 Å, when the MQW total active region thickness is 1 μm

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; Al mole fraction; GaAs-Al_xGa_1-xAs; MQW parameters; active region thickness; barrier thickness; electric field; interface quality; modulator on/off ratio; multiple-quantum-well electroabsorption modulators; well thickness; Artificial intelligence; Chirp modulation; Gallium arsenide; Insertion loss; Optical losses; Optical modulation; Optical refraction; Optical variables control; Quantum well devices; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29312

Filename

29312