Title :
Effect of parameter variations on the performance of GaAs/AlGaAs multiple-quantum-well electroabsorption modulators
Author :
Cho, Hung-Sik ; Prucnal, PAul R.
Author_Institution :
Center for Telecommun. Res., Columbia Univ., New York, NY, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
A theoretical investigation is presented of the dependence of electroabsorption in GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures on the MQW parameters (Al mole fraction x, well thickness Lz barrier thickness Lb and interface quality) and on the applied electric field studied. The on/off ratio of a modulator using MQWs with x=0.45, Lz=75 Å, and L b=78 Å is predicted to increase by 20% compared to that of a modulator using MQWs with x=0.3, Lz =100 Å, and Lb=100 Å, when the MQW total active region thickness is 1 μm
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; Al mole fraction; GaAs-AlxGa1-xAs; MQW parameters; active region thickness; barrier thickness; electric field; interface quality; modulator on/off ratio; multiple-quantum-well electroabsorption modulators; well thickness; Artificial intelligence; Chirp modulation; Gallium arsenide; Insertion loss; Optical losses; Optical modulation; Optical refraction; Optical variables control; Quantum well devices; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
