Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers

Author

Yang, Hai-Gang ; Fluxman, Steve ; Reita, Carlo ; Migliorato, Piero

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

29

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

727

Lastpage

732

Abstract

The small signal properties of polysilicon TFT opamps have been investigated in this paper. A method for the scaling of g_m (transconductance) and g_ds (output conductance) has been proposed, facilitating their estimates for various transistors in operational amplifiers. The analysis of two CMOS opamps fabricated by a low temperature, glass compatible poly-Si TFT process is demonstrated in comparison to the measured performance. The first implementation has been internally compensated with high load-driving capability (up to 36 pF), while the second one has employed a cascode stage for increased gain (56 dB)

Keywords

CMOS integrated circuits; elemental semiconductors; linear integrated circuits; linear network analysis; operational amplifiers; silicon; thin film transistors; 36 pF; 56 dB; CMOS opamps; Si; TFT operational amplifiers; cascode stage; glass compatible poly-Si TFT process; high load-driving capability; low temperature process; output conductance; polysilicon TFT; small signal properties; transconductance; Active matrix liquid crystal displays; CMOS process; Glass; MOSFETs; Operational amplifiers; Optical amplifiers; Silicon; Temperature; Thin film transistors; Transconductance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.293120

Filename

293120