Title :
Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers
Author :
Yang, Hai-Gang ; Fluxman, Steve ; Reita, Carlo ; Migliorato, Piero
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/1/1994 12:00:00 AM
Abstract :
The small signal properties of polysilicon TFT opamps have been investigated in this paper. A method for the scaling of gm (transconductance) and gds (output conductance) has been proposed, facilitating their estimates for various transistors in operational amplifiers. The analysis of two CMOS opamps fabricated by a low temperature, glass compatible poly-Si TFT process is demonstrated in comparison to the measured performance. The first implementation has been internally compensated with high load-driving capability (up to 36 pF), while the second one has employed a cascode stage for increased gain (56 dB)
Keywords :
CMOS integrated circuits; elemental semiconductors; linear integrated circuits; linear network analysis; operational amplifiers; silicon; thin film transistors; 36 pF; 56 dB; CMOS opamps; Si; TFT operational amplifiers; cascode stage; glass compatible poly-Si TFT process; high load-driving capability; low temperature process; output conductance; polysilicon TFT; small signal properties; transconductance; Active matrix liquid crystal displays; CMOS process; Glass; MOSFETs; Operational amplifiers; Optical amplifiers; Silicon; Temperature; Thin film transistors; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
