DocumentCode :
1102004
Title :
Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 µm range
Author :
Utaka, Katsuyuki ; Akiba, Shigeyuki ; Sakai, Kazuo ; Matsushima, Yuichi
Author_Institution :
KDD Research and Development Laboratories, Tokyo, Japan
Volume :
20
Issue :
3
fYear :
1984
fDate :
3/1/1984 12:00:00 AM
Firstpage :
236
Lastpage :
245
Abstract :
The effect of mirror facets on lasing properties of distributed feedback (DFB) InGaAsP/InP laser diodes was studied theoretically and experimentally. A DFB laser with a window region was found to be suitable to examine the effect of mirror facets. The effective reflectivity of a window structure was calculated to be very small, typically as small as 0.03 percent for a few tens of micrometers of the window region. These small effective reflectivities were experimentally confirmed. Three kinds of DFB lasers, i.e., a double-window (DW), a single-window (SW), and a Fabry-Perot (FP), were discussed. Two modes with a separation corresponding to a so-called stopband appeared in a DW-DFB laser, in which almost no reflection at both ends was estimated. On the other hand, the threshold and the resonant wavelength of an SW- and an FP-DFB laser were found to be sensitive to the phases of corrugation at the facets. It turned out, however, that the mirror facet contributed to the single-mode operation due to an asymmetric resonant spectrum and to the reduction in the threshold. Although a low-threshold-current FP-DFB laser was experimentally obtained, the coincidence between the gain peak and the Bragg wavelengths was essential in this type. The SW-DFB laser seemed the most promising among the three types in terms of the stability of the single-mode operation.
Keywords :
Distributed feedback (DFB) lasers; Gallium materials/lasers; Laser resonators; Diode lasers; Distributed feedback devices; Indium phosphide; Laser feedback; Laser modes; Laser stability; Laser theory; Mirrors; Reflectivity; Resonance;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1984.1072383
Filename :
1072383
Link To Document :
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