DocumentCode :
1102005
Title :
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
Author :
Kamath, K. ; Bhattacharya, P. ; Sosnowski, T. ; Norris, T. ; Phillips, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1374
Lastpage :
1375
Abstract :
We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 μm and Jth=650 A/cm2 for a 90 μm×1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃200 ps
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum dots; time resolved spectroscopy; 1 mm; 1.028 micrometre; 200 ps; 90 micron; In0.4Ga0.6As-GaAs; broad-area laser; e1-hh2 higher-order transition,; emission wavelength; molecular beam epitaxy; room-temperature operating characteristics; self-organised quantum dot lasers; spontaneous recombination time; steady-state photoluminescence; time-resolved photoluminescence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960921
Filename :
511127
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102005
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