• DocumentCode
    1102005
  • Title

    Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

  • Author

    Kamath, K. ; Bhattacharya, P. ; Sosnowski, T. ; Norris, T. ; Phillips, J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1374
  • Lastpage
    1375
  • Abstract
    We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 μm and Jth=650 A/cm2 for a 90 μm×1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃200 ps
  • Keywords
    III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum dots; time resolved spectroscopy; 1 mm; 1.028 micrometre; 200 ps; 90 micron; In0.4Ga0.6As-GaAs; broad-area laser; e1-hh2 higher-order transition,; emission wavelength; molecular beam epitaxy; room-temperature operating characteristics; self-organised quantum dot lasers; spontaneous recombination time; steady-state photoluminescence; time-resolved photoluminescence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960921
  • Filename
    511127
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102005