A high-frequency fifth order switched-current bilinear elliptic lowpass filter

Author

Battersby, Nicholas C. ; Toumazou, Chris

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

29

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

737

Lastpage

740

Abstract

Design considerations for and measured results of a prototype high-frequency fifth order switched-current bilinear elliptic lowpass filter are presented in this paper. The prototype filter was implemented on a standard 1.2 μm double-metal single-polysilicon CMOS process and occupied a total die area of 1.5 mm². When clocked at 2 MHz, the filter achieved a passband edge of 350 kHz, a stopband edge of 420 kHz, a passband ripple of 0.6 dB and a minimum stopband attenuation of 26 dB. With a single 5 V power supply the filter consumed 28 mW

Keywords

CMOS integrated circuits; active filters; linear integrated circuits; low-pass filters; network synthesis; switched filters; 1.2 micron; 2 MHz; 28 mW; 350 to 420 kHz; 5 V; HF filter; Si; bilinear elliptic lowpass filter; double-metal single-polysilicon CMOS process; fifth order filter; high-frequency filter; single 5 V power supply; switched-current filter; Attenuation; CMOS process; Capacitance; Clocks; Frequency; Passband; Passive filters; Power supplies; Prototypes; Switched capacitor circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.293122

Filename

293122