• DocumentCode
    1102112
  • Title

    Stimulated Brillouin scattering suppression with low residual AM using a novel temperature wavelength-dithered DFB laser diode

  • Author

    Eskildsen, L. ; Hansen, P.B. ; Koren, U. ; Miller, B.I. ; Young, M.G. ; Dreyer, K.F.

  • Author_Institution
    Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1387
  • Lastpage
    1389
  • Abstract
    The effective threshold for stimulated Brillouin scattering for a data-encoded signal is increased from 11.0 to 23.4 dBm by using a temperature-tunable laser diode. A 5 kHz sinusoid is applied to a Ti/Pt thin film resistor located along the laser contact on top of the device, resulting in a 10 kHz dithering of the wavelength. The residual amplitude modulation index at 10 kHz is only 1.2×10-4
  • Keywords
    amplitude modulation; distributed feedback lasers; optical communication equipment; optical modulation; semiconductor lasers; stimulated Brillouin scattering; 10 kHz; DFB laser diode; Ti-Pt; Ti/Pt thin film resistor; data-encoded signal; residual amplitude modulation; stimulated Brillouin scattering suppression; temperature modulation; wavelength dithering;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960909
  • Filename
    511136