DocumentCode
1102112
Title
Stimulated Brillouin scattering suppression with low residual AM using a novel temperature wavelength-dithered DFB laser diode
Author
Eskildsen, L. ; Hansen, P.B. ; Koren, U. ; Miller, B.I. ; Young, M.G. ; Dreyer, K.F.
Author_Institution
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Volume
32
Issue
15
fYear
1996
fDate
7/18/1996 12:00:00 AM
Firstpage
1387
Lastpage
1389
Abstract
The effective threshold for stimulated Brillouin scattering for a data-encoded signal is increased from 11.0 to 23.4 dBm by using a temperature-tunable laser diode. A 5 kHz sinusoid is applied to a Ti/Pt thin film resistor located along the laser contact on top of the device, resulting in a 10 kHz dithering of the wavelength. The residual amplitude modulation index at 10 kHz is only 1.2×10-4
Keywords
amplitude modulation; distributed feedback lasers; optical communication equipment; optical modulation; semiconductor lasers; stimulated Brillouin scattering; 10 kHz; DFB laser diode; Ti-Pt; Ti/Pt thin film resistor; data-encoded signal; residual amplitude modulation; stimulated Brillouin scattering suppression; temperature modulation; wavelength dithering;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960909
Filename
511136
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