DocumentCode :
1102112
Title :
Stimulated Brillouin scattering suppression with low residual AM using a novel temperature wavelength-dithered DFB laser diode
Author :
Eskildsen, L. ; Hansen, P.B. ; Koren, U. ; Miller, B.I. ; Young, M.G. ; Dreyer, K.F.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1387
Lastpage :
1389
Abstract :
The effective threshold for stimulated Brillouin scattering for a data-encoded signal is increased from 11.0 to 23.4 dBm by using a temperature-tunable laser diode. A 5 kHz sinusoid is applied to a Ti/Pt thin film resistor located along the laser contact on top of the device, resulting in a 10 kHz dithering of the wavelength. The residual amplitude modulation index at 10 kHz is only 1.2×10-4
Keywords :
amplitude modulation; distributed feedback lasers; optical communication equipment; optical modulation; semiconductor lasers; stimulated Brillouin scattering; 10 kHz; DFB laser diode; Ti-Pt; Ti/Pt thin film resistor; data-encoded signal; residual amplitude modulation; stimulated Brillouin scattering suppression; temperature modulation; wavelength dithering;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960909
Filename :
511136
Link To Document :
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