DocumentCode :
1102145
Title :
Practical integration of process, device, and circuit simulation
Author :
Sokel, Ralph J. ; Macmillen, Donald B.
Author_Institution :
INMOS Corporation, Colorado Springs, CO
Volume :
32
Issue :
10
fYear :
1985
fDate :
10/1/1985 12:00:00 AM
Firstpage :
2110
Lastpage :
2116
Abstract :
Readily available process, device, and circuit simulation programs have been integrated into an effective system for enhancing semiconductor product development. In this paper, the system will be discussed with particular emphasis on the problems encountered in making simulation tools accessible to users. Each of the primary programs is reviewed, and the modifications and enhancements which have been made to adapt the programs to our requirements are discussed. The problem of interpolating impurity concentration profiles between process simulation grids and device simulation grids is discussed. The link between device simulation and circuit simulation is parameter extraction. The application of optimization techniques for parameter extraction is considered.
Keywords :
Analytical models; Bipolar transistor circuits; Circuit simulation; Computational modeling; Fabrication; MOSFETs; Physics; Predictive models; Product development; Silicon devices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22247
Filename :
1484993
Link To Document :
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