DocumentCode
1102145
Title
Practical integration of process, device, and circuit simulation
Author
Sokel, Ralph J. ; Macmillen, Donald B.
Author_Institution
INMOS Corporation, Colorado Springs, CO
Volume
32
Issue
10
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
2110
Lastpage
2116
Abstract
Readily available process, device, and circuit simulation programs have been integrated into an effective system for enhancing semiconductor product development. In this paper, the system will be discussed with particular emphasis on the problems encountered in making simulation tools accessible to users. Each of the primary programs is reviewed, and the modifications and enhancements which have been made to adapt the programs to our requirements are discussed. The problem of interpolating impurity concentration profiles between process simulation grids and device simulation grids is discussed. The link between device simulation and circuit simulation is parameter extraction. The application of optimization techniques for parameter extraction is considered.
Keywords
Analytical models; Bipolar transistor circuits; Circuit simulation; Computational modeling; Fabrication; MOSFETs; Physics; Predictive models; Product development; Silicon devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22247
Filename
1484993
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