• DocumentCode
    1102255
  • Title

    The resonance frequency dependence on the doping level of 1.3-µm InGaAsP lasers

  • Author

    Su, Chin Bing ; Lanzisera, Vincent A.

  • Author_Institution
    GTE Laboratories, Inc., Waltham, MA
  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2190
  • Lastpage
    2191
  • Abstract
    Small-signal direct amplitude modulation of 1.3-µm In-GaAsP lasers with different active region doping levels are compared. It was found that diodes from wafers with a heavily doped active layer show appreciably higher resonance frequency than diodes from lightly doped wafers.
  • Keywords
    Amplitude modulation; Bandwidth; Diodes; Doping; Fiber lasers; Frequency dependence; Optical attenuators; Power lasers; Resonance; Resonant frequency;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22256
  • Filename
    1485002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102255