Title :
The resonance frequency dependence on the doping level of 1.3-µm InGaAsP lasers
Author :
Su, Chin Bing ; Lanzisera, Vincent A.
Author_Institution :
GTE Laboratories, Inc., Waltham, MA
fDate :
11/1/1985 12:00:00 AM
Abstract :
Small-signal direct amplitude modulation of 1.3-µm In-GaAsP lasers with different active region doping levels are compared. It was found that diodes from wafers with a heavily doped active layer show appreciably higher resonance frequency than diodes from lightly doped wafers.
Keywords :
Amplitude modulation; Bandwidth; Diodes; Doping; Fiber lasers; Frequency dependence; Optical attenuators; Power lasers; Resonance; Resonant frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22256
