• DocumentCode
    1102258
  • Title

    170 GHz transferred-substrate heterojunction bipolar transistor

  • Author

    Bhattacharya, U. ; Samoska, L. ; Pullela, R. ; Guthrie, J. ; Lee, Q. ; Agarwal, B. ; Mensa, D. ; Rodwell, M.J.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1405
  • Lastpage
    1406
  • Abstract
    The authors report transferred-substrate HBTs with an fmax of 170 GHz and fτ of 120 GHz. Devices scaled to deep submicrometre dimensions should obtain an fmax of ~500 GHz
  • Keywords
    capacitance; characteristics measurement; heterojunction bipolar transistors; 120 GHz; 170 GHz; collector-base capacitance; current-gain cutoff frequency; deep submicrometre dimensions; power-gain cutoff frequency; transferred-substrate HBTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960898
  • Filename
    511148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102258