DocumentCode
1102262
Title
Amorphous silicon phototransistor on a glass substrate
Author
Wu, B.S. ; Chang, Chun-Yen ; Fang, Yean-Yuen ; Lee, R.H.
Author_Institution
National Cheng Kung University, Taiwan, Republic of China
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2192
Lastpage
2196
Abstract
An amorphous silicon n+-i-p+-i-n+thin-film phototransistor was made on a glass substrate. The p+base is very thin (∼ 200 Å) compared with 2000 to 5000 Å of the collector i-layer. Therefore, the emitter current which is induced from the photogenerated flux in the collector i-layer is very high. In addition, hole lifetime (minority carrier in the emitter) and transit time are very short, the device possesses fast rise time and fall time of 30 µs, which is mainly governed by the junction capacitance-resistance charging effect and strays.
Keywords
Amorphous silicon; Capacitance; Cleaning; Electrodes; Glass; Phototransistors; Plasma temperature; Semiconductor thin films; Substrates; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22257
Filename
1485003
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