• DocumentCode
    1102266
  • Title

    Buried refractive microlenses formed by selective oxidation of AlGaAs

  • Author

    Blum, O. ; Lear, K.L. ; Hou, H.Q. ; Warren, M.E.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1406
  • Lastpage
    1408
  • Abstract
    The authors demonstrate a novel method of fabricating buried refractive microlenses formed by selective oxidation of AlGaAs epitaxial layers on a GaAs substrate. By appropriate tailoring of the Al mole fraction in the vertical direction, a lens-shaped oxidation shape was achieved. Performance of the microlenses formed in this way was experimentally evaluated at 980 nm, and modelled theoretically
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; lenses; oxidation; semiconductor lasers; surface emitting lasers; 980 nm; AlGaAs-GaAs; VCSELs; buried refractive microlenses; lens-shaped oxidation shape; mole fraction; selective oxidation; vertical direction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960887
  • Filename
    511149