• DocumentCode
    1102275
  • Title

    Comparison of dry etch techniques for GaN

  • Author

    Shul, R.J. ; McClellan, G.B. ; Pearton, S.J. ; Abernathy, C.R. ; Constantine, C. ; Barratt, C.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1408
  • Lastpage
    1409
  • Abstract
    Dry etching of GaN in Cl2/H2/CH4/Ar has been compared using electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) systems. GaN etch rates and surface morphology were obtained as a function of RF power, and showed significant improvements under high density plasma conditions
  • Keywords
    III-V semiconductors; cyclotron resonance; gallium compounds; sputter etching; GaN; RF power; dry etch techniques; electron cyclotron resonance; etch rates; high density plasma conditions; inductively coupled plasma; reactive ion etch; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960943
  • Filename
    511150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102275