DocumentCode :
1102295
Title :
Current-dependent silicon oxide growth during scanned probe lithography
Author :
Ruskell, T.G. ; Pyle, J.L. ; Workman, R.K. ; Yao, X. ; Sarid, D.
Author_Institution :
Optical Sci. Center, Arizona Univ., Tucson, AZ, USA
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1411
Lastpage :
1412
Abstract :
Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H- ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating
Keywords :
lithography; nanotechnology; oxidation; scanning probe microscopy; silicon compounds; tunnelling; Fowler-Nordheim tunnelling; H- ion reduction; SiO2; electrical quality; insulating lines; nanofabrication; oxidation; picoAmp currents; scanned probe lithography; silicon oxide growth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960882
Filename :
511152
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102295
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