• DocumentCode
    1102305
  • Title

    Determination of the temporal plasma density above a semiconductor bridge

  • Author

    Kim, J. ; Song, Y.-H. ; Nam, K.-S.

  • Author_Institution
    Semicond. Div., Electron. & Commun. Res. Inst., Taejon, South Korea
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1412
  • Lastpage
    1413
  • Abstract
    A new method of determining the temporal plasma density above a semiconductor bridge using a microwave resonator probe has been proposed. Experimental results indicate that the plasma density is observed to increase to a peak value of 4.2×1011 cm-1 and decay exponentially with time, which is consistent with diffusion dominating the plasma transport
  • Keywords
    microwave measurement; plasma density; plasma probes; plasma production; plasma transport processes; semiconductor devices; diffusion; microwave resonator probe; plasma transport; semiconductor bridge; temporal plasma density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960899
  • Filename
    511153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102305