• DocumentCode
    1102326
  • Title

    High fmax carbon-doped base InP/lnGaAs heterojunction bipolar transistors grown by MOCVD

  • Author

    Ito, H. ; Yamahata, S. ; Shigekawa, N. ; Kurishima, K.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1415
  • Lastpage
    1416
  • Abstract
    The authors report excellent microwave characteristics of C-doped base InP/InGaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). A combination of a low resistance base layer (2.5×1019 cm-3, 700 Å) and a very narrow emitter mesa structure (0.5×4.7 μm 2) enabled us to achieve a record maximum oscillation frequency (fmax) of 170 GHz at Jc=1.7×105 A/cm2 for C-doped base InP/InGaAs HBTs
  • Keywords
    III-V semiconductors; carbon; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor doping; semiconductor growth; 170 GHz; InP-InGaAs:C; MOCVD growth; carbon-doped base InP/lnGaAs heterojunction bipolar transistor; maximum oscillation frequency; metalorganic chemical vapour deposition; microwave characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960915
  • Filename
    511155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102326