• DocumentCode
    1102345
  • Title

    Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET´s

  • Author

    Ishiuchi, Hidemi ; Matsumoto, Yasuo ; Sawada, Shizuo ; Ozawa, Osamu

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2238
  • Lastpage
    2242
  • Abstract
    Intrinsic capacitance of lightly doped drain (LDD) MOSFET´s is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance Cgdof LDD MOSFET´s is smaller than that of conventional MOSFET´s in the saturation region. The technique is applied to determine the effective channel length.
  • Keywords
    Capacitance measurement; Circuit simulation; Coaxial components; Condition monitoring; Helium; Length measurement; MOSFET circuits; Probes; Semiconductor device noise; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22264
  • Filename
    1485010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102345