DocumentCode :
1102351
Title :
Selectively grown ohmic contacts to δ-doped diamond films
Author :
Shim, K.-H. ; Lim, J.-T.
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon
Volume :
32
Issue :
15
fYear :
1996
fDate :
7/18/1996 12:00:00 AM
Firstpage :
1419
Lastpage :
1421
Abstract :
δ-doped homoepitaxial diamond films were grown by microwave CVD (MWCVD) in order to simultaneously achieve convenient carrier sheet concentration (Ns<1013 cm-2) and low acceptor activation energy. The δ-doped layers are contacted laterally using selectively grown highly doped p+-diamond. Si-based contacts were deposited and a temperature independent specific contact resistance of 7×10-5 Ω cm2 was extracted from TLM-measurements between room temperature and 400°C
Keywords :
CVD coatings; contact resistance; diamond; elemental semiconductors; ohmic contacts; semiconductor epitaxial layers; δ-doped homoepitaxial diamond film; C; TLM measurement; acceptor activation energy; carrier sheet concentration; highly doped p+-diamond; microwave CVD; ohmic contact; selective growth; silicon; specific contact resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960927
Filename :
511158
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102351
بازگشت