DocumentCode :
1102436
Title :
Ripple structures associated with ordered surface defects in dielectrics
Author :
Soileau, M.J.
Author_Institution :
North Texas State University, Denton, TX, USA
Volume :
20
Issue :
5
fYear :
1984
fDate :
5/1/1984 12:00:00 AM
Firstpage :
464
Lastpage :
467
Abstract :
Laser-induced ripple structures on material surfaces have been observed by a number of workers for various materials including metals, semiconductors, and dielectrics. A model has been proposed [1] which correctly accounts for the spacing and polarization dependence of the ripples, and the association of the ripples with material defects. In this letter, experimental results which unambiguously show the association of these features with defects are presented. Quantitative measurements of laser-induced damage thresholds show a reduction of damage thresholds for surfaces with controlled linear defects aligned orthogonal to the incident laser field (as predicted in [1]).
Keywords :
Dielectric radiation effects; Laser radiation effects; Dielectric materials; Dielectric measurements; Inorganic materials; Laser modes; Optical control; Optical materials; Polarization; Semiconductor lasers; Semiconductor materials; Surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1984.1072422
Filename :
1072422
Link To Document :
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