DocumentCode :
1102440
Title :
The annealing of phosphorus-ion-implanted cadmium telluride by a pulsed electron beam
Author :
Yang, C.B. ; Lue, J.T. ; Hwang, H.L. ; Peng, M.L.
Author_Institution :
National Tsing Hua University, Taiwan, Republic of China
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2297
Lastpage :
2300
Abstract :
A pulsed electron beam of 10 µs FWHM has been successfully applied to anneal phosphorus-implanted CdTe. The sheet resistance drops to 6.3 × 102Ω/ from nearly infinite for the As-implanted wafers as the irradiation intensity exceeds 9.2 J/cm2. A p-type carrier concentration as high as 3 × 1018cm-3has been reached as measured by the van der Pauw and Hall techniques.
Keywords :
Annealing; Cadmium compounds; Doping; Electron beams; Impurities; Integrated optics; Mercury (metals); Nonlinear optics; Optical modulation; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22273
Filename :
1485019
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102440
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