DocumentCode :
1102606
Title :
On the parasitic capacitances of multilevel parallel metallization lines
Author :
Taylor, Clayborne D. ; Elkhouri, George N. ; Wade, Thomas E.
Author_Institution :
Mississippi State University, Starkville, MS
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2408
Lastpage :
2414
Abstract :
A versatile and powerful finite-difference solution technique is developed for determining the capacitances between arrays of closely spaced parallel conductors. Results are presented for configurations typical of multilevel VLSI structures.
Keywords :
Conductors; Delay; Finite difference methods; Finite element methods; Laplace equations; Metallization; Parasitic capacitance; Sparse matrices; Switching circuits; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22287
Filename :
1485033
Link To Document :
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