Nonplanar InGaAs Gate Wrapped Around Field-Effect Transistors

Nonplanar In_0.53Ga_0.47As gate wrap around field-effect transistors (GWAFETs) with atomic-layer deposited high-k dielectric and metal gate have been demonstrated in this paper. By applying novel device structure and optimizing fabrication process, In_0.53Ga_0.47As GWAFETs exhibit significant performance improvements over planar MOSFETs on both current drive capability and electrostatics control. In_0.53Ga_0.47As GWAFETs with fin width (W_fin) 40-200 nm have been fabricated. Devices with narrower W_fin exhibit higher drive current, transconductance, and better short channel effect control, which demonstrates the scalability of nonplanar In_0.53Ga_0.47As GWAFETs. Subthreshold swing of 80 mV/decade and drain-induced barrier lowering of 20 mV/V have been achieved by 40-nm W_fin and 140-nm L_g In_0.53Ga_0.47As GWAFETs.