Title :
The determination of impact ionization coefficients in
Author :
Bulman, Gary E. ; Robbins, Virginia M. ; Stillman, G.E. ; Stillman, Gregory E.
fDate :
11/1/1985 12:00:00 AM
Abstract :
The electron and hole impact ionization coefficients in
Keywords :
Charge carrier processes; Data analysis; Doping; Electrons; Gallium arsenide; Impact ionization; P-n junctions; Photoconductivity; Semiconductor device noise; Space exploration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22295
