Title :
Graded Bit-Error-Correcting Codes With Applications to Flash Memory
Author :
Gabrys, Ryan ; Yaakobi, Eitan ; Dolecek, Lara
Author_Institution :
Univ. of California at Los Angeles, Los Angeles, CA, USA
Abstract :
Flash memory is a promising new storage technology. Supported by empirical data collected from a Flash memory device, we propose a class of codes that exploits the asymmetric nature of the error patterns in a Flash device using tensor product operations. We call these codes graded bit-error-correcting codes. As demonstrated on the data collected from a Flash chip, these codes significantly delay the onset of errors and therefore have the potential to prolong the lifetime of the memory device.
Keywords :
error correction codes; error statistics; flash memories; tensors; flash chip; flash memory device; graded bit-error-correcting code; tensor product operations; Decoding; Error analysis; Error correction codes; Flash memory; Product codes; Tensile stress; Vectors; Coding theory; error-correcting codes; flash memory; tensor product codes;
Journal_Title :
Information Theory, IEEE Transactions on
DOI :
10.1109/TIT.2012.2234207