Title :
IIA-2 OMCVD Grown high gain modulation doped AlGaAs/GaAs transistors with no I-V collapse
Author :
Bhat, Ritesh ; Chan, W.K. ; Kastalsky, A. ; Koza, M.A.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Cryogenics; Epitaxial layers; FETs; Frequency; Gallium arsenide; HEMTs; MESFETs; National electric code; Noise figure; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22308
