DocumentCode :
1102847
Title :
IIA-3 cryogenic noise performance of quarter-micrometer gate-length high-electron-mobility transistors
Author :
Chao, P.C. ; Smith, P.M. ; Mishra, Umesh K. ; Palmateer, S.C. ; Hwang, James C. M. ; Pospieszalski, M. ; Brooks, Todd ; Weinreb, S.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2528
Lastpage :
2528
Keywords :
Chaos; Circuit noise; Cryogenics; Gallium arsenide; HEMTs; Laboratories; MODFETs; Noise figure; Radio astronomy; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22309
Filename :
1485055
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102847
