Title :
IIA-1 is HEMT really a high electron mobility transistor?—Proposal of a new GaAs MESFET structure which can give a higher gmthan HEMT
Author :
Hasegawa, Fumihiro
fDate :
11/1/1985 12:00:00 AM
Keywords :
Doping; Electron devices; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MESFETs; MODFETs; Neodymium; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22310
