DocumentCode :
1102885
Title :
IIA-6 high-performance AlGaAs/GaAs/N-AlGaAs insulated-gate inverted-structure HEMT ring-oscillator
Author :
Kinoshita, Hiroyuki ; Sano, Yousuke ; Nishi, Shohei ; Ishida, Tomoyuki ; Akiyama, Masanori ; Kaminishi, K.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2529
Lastpage :
2530
Keywords :
DH-HEMTs; Electron devices; Gallium arsenide; HEMTs; Insulation; Inverters; MODFETs; Power generation; Propagation delay; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22313
Filename :
1485059
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1102885
