• DocumentCode
    1102885
  • Title

    IIA-6 high-performance AlGaAs/GaAs/N-AlGaAs insulated-gate inverted-structure HEMT ring-oscillator

  • Author

    Kinoshita, Hiroyuki ; Sano, Yousuke ; Nishi, Shohei ; Ishida, Tomoyuki ; Akiyama, Masanori ; Kaminishi, K.

  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2529
  • Lastpage
    2530
  • Keywords
    DH-HEMTs; Electron devices; Gallium arsenide; HEMTs; Insulation; Inverters; MODFETs; Power generation; Propagation delay; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22313
  • Filename
    1485059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102885