Title :
IIA-7 8.5-Picosecond ring oscillator gate delay with self-aligned gate modulation-doped n+-(Al,Ga)As/GaAs FET´s
fDate :
11/1/1985 12:00:00 AM
Keywords :
Circuit testing; Delay; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; MODFET circuits; Ring oscillators; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22314
