DocumentCode

1102906

Title

IIA-7 8.5-Picosecond ring oscillator gate delay with self-aligned gate modulation-doped n⁺-(Al,Ga)As/GaAs FET´s

Author

Abrokwah, J.K.

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2530

Lastpage

2530

Keywords

Circuit testing; Delay; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; MODFET circuits; Ring oscillators; Silicon; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22314

Filename

1485060