Title :
IIIA-8 front-side illuminated InP/GaInAs/InP p-i-n photodiode with FWHM < 26 picoseconds
fDate :
11/1/1985 12:00:00 AM
Keywords :
Delay effects; Delay estimation; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium phosphide; Laboratories; PIN photodiodes; Ultrafast optics; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22330
