DocumentCode :
1103089
Title :
IIIB-2 Channel length characterization of LDD MOSFET´s
Author :
Sun, J.Y.C. ; Wordeman, M.R. ; Laux, S.E.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2536
Lastpage :
2537
Keywords :
Algorithm design and analysis; Analytical models; Data mining; Electrons; Error analysis; Geometry; MOSFET circuits; Solid modeling; Solid state circuits; Sun;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22332
Filename :
1485078
Link To Document :
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