Title :
IIIB-3 a unified analytical physical MOSFET model
fDate :
11/1/1985 12:00:00 AM
Keywords :
Analytical models; Doping; Fluctuations; Geometry; Gratings; MOSFET circuits; Physics; Semiconductor process modeling; Solid modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22334
