Title :
IIIB-6 a nonsubstrate bias effect MOS transistor
fDate :
11/1/1985 12:00:00 AM
Keywords :
Contact resistance; Electron devices; Logic devices; MOS devices; MOSFET circuits; Performance evaluation; Silicon; Standards development; Superlattices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22337
