Title :
IVA-3 performance characteristics of high-quality GaAs AlxGa1-xAs superlattice avalanche photodiodes
Author :
Nashimoto, Y. ; Bhattacharya, P.K. ; Dhar, Sudipta
fDate :
11/1/1985 12:00:00 AM
Keywords :
Charge carrier processes; Diode lasers; Gallium arsenide; Laboratories; Optical materials; Optical superlattices; Photodiodes; Photoluminescence; Photonic band gap; Quantum well devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22340
