DocumentCode :
1103193
Title :
IVA-4 room-temperature operation of 645-nm AlxGa1-xAs multi-quantum-well laser diodes grown by molecular-beam epitaxy
Author :
Iwamura, Hideyuki ; Saku, T. ; Hirayama, Yuzo ; Suzuki, Yuya ; Okamoto, Hiroshi
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2540
Lastpage :
2540
Keywords :
DH-HEMTs; Diode lasers; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical films; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22341
Filename :
1485087
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103193
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