DocumentCode
1103215
Title
Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes
Author
Brown, Elliott R. ; Eglash, Stephen J. ; Turner, George W. ; Parker, C.D. ; Pantano, J.V. ; Calawa, D.R.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
41
Issue
6
fYear
1994
fDate
6/1/1994 12:00:00 AM
Firstpage
879
Lastpage
882
Abstract
Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by X-ray diffraction measurements, it displayed only a small decrease in peak-to-valley current ratio
Keywords
X-ray diffraction examination of materials; aluminium compounds; dislocation density; gallium arsenide; indium compounds; resonant tunnelling devices; semiconductor growth; substrates; tunnel diodes; GaAs; GaAs substrate; InAs; InAs substrate; InAs-AlSb-GaAs; InAs-AlSb-InAs; RTD; X-ray diffraction measurements; dislocation density; dislocations; lattice-mismatched growth; peak-to-valley current ratio; resonant-tunneling diodes; Circuits; Density measurement; Diodes; Doping profiles; Gallium arsenide; Laboratories; Lattices; Resonant tunneling devices; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.293296
Filename
293296
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