Two-dimensional simulation for resonant tunneling transistor

Author

Tomizawa, Masaaki ; Taniyama, Hideaki ; Yoshii, Akira

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

41

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

883

Lastpage

887

Abstract

A new two-dimensional device simulation for the resonant tunneling transistor is presented. In the simulation, the one-dimensional Schrodinger equation is solved for the intrinsic area of the transistor and the conventional two-dimensional drift-diffusion equations are solved for the extrinsic part. Both equations are coupled with the carrier generation-recombination term in the drift-diffusion equations. In addition, the Poisson equation is also solved self-consistently with them to take the charge distribution effect into account. The two-dimensional simulator has been successfully applied to the analysis of a resonant tunneling transistor and it was found that the current-voltage characteristics sensitively depend on the base resistance. This means that a two-dimensional treatment of the voltage drop in the base region is essential for an accurate simulation

Keywords

Schrodinger equation; resonant tunnelling devices; semiconductor device models; simulation; transistors; 2D drift-diffusion equations; 2D simulation; Poisson equation; base region; base resistance; carrier generation-recombination term; charge distribution effect; current-voltage characteristics; one-dimensional Schrodinger equation; resonant tunneling transistor; two-dimensional device simulation; voltage drop; Analytical models; Doping; Fabrication; Large scale integration; Poisson equations; Resonant tunneling devices; Schrodinger equation; Semiconductor devices; Supercomputers; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293297

Filename

293297