Two-dimensional simulation for resonant tunneling transistor

A new two-dimensional device simulation for the resonant tunneling transistor is presented. In the simulation, the one-dimensional Schrodinger equation is solved for the intrinsic area of the transistor and the conventional two-dimensional drift-diffusion equations are solved for the extrinsic part. Both equations are coupled with the carrier generation-recombination term in the drift-diffusion equations. In addition, the Poisson equation is also solved self-consistently with them to take the charge distribution effect into account. The two-dimensional simulator has been successfully applied to the analysis of a resonant tunneling transistor and it was found that the current-voltage characteristics sensitively depend on the base resistance. This means that a two-dimensional treatment of the voltage drop in the base region is essential for an accurate simulation