DocumentCode
1103249
Title
Mask topography effects in projection printing of phase-shifting masks
Author
Wong, Alfred K. ; Neureuther, Andrew R.
Author_Institution
California Univ., Berkeley, CA, USA
Volume
41
Issue
6
fYear
1994
fDate
6/1/1994 12:00:00 AM
Firstpage
895
Lastpage
902
Abstract
Topography effects of glass edges in phase-shifting masks (PSM´s) on image quality are assessed using the rigorous electromagnetic simulation program TEMPEST on three different optical systems for four PSM technologies including alternating, rim, attenuated, and chromeless. The scalar and thin mask approximations used in simulation programs such as SPLAT can be in error by as much as 20% for certain classes of shifter edges. A feature size independent bias of 0.021 λ/NA per edge is recommended for alternating masks with vertical edges because light is lost near the etched glass edges. No direct electromagnetic interaction between chromium edges and shifter edges was found for rim phase-shifting masks. The rim dimension can thus be designed solely on the basis of the sidelobe level and peak intensity. For attenuated PSM, edge effects are less severe but sidelobe problems occur. For a center to sidelobe contrast of 0.6 over a DOF of 3 RU, a lower transmission of 4% is recommended. For chromeless PSM, the imbalance in image peaks is shown to be affected by the optical stepper parameters. In any PSM technology, it appears that a 360° glass protrusion may produce a drastic drop in intensity due to resonant effects
Keywords
digital simulation; electronic engineering computing; lithography; masks; surface topography; SPLAT; TEMPEST; alternating masks; attenuated masks; chromeless masks; electromagnetic simulation program; feature size independent bias; glass edges; image quality; mask topography effects; phase-shifting masks; projection printing; resonant effects; rim masks; sidelobe problems; Chromium; Computer simulation; Etching; Glass; Image quality; Optical attenuators; Optical scattering; Printing; Resonance; Surfaces;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.293299
Filename
293299
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