• DocumentCode
    1103250
  • Title

    Low-voltage CMOS VT extractor

  • Author

    Vlassis, S. ; Psychalinos, Costas

  • Author_Institution
    Univ. of Patras, Rio
  • Volume
    43
  • Issue
    17
  • fYear
    2007
  • Firstpage
    921
  • Lastpage
    923
  • Abstract
    A new and accurate MOS threshold voltage (VT) extractor is proposed. The principle of operation is based on a novel negative feedback that reduces the effects caused by second-order factors and supply voltage variations. The advantages of the circuit against previous implementations are true low-voltage supply operation and low current consumption capabilities. Simulation results, based on the 0.35 mum AMS BiCMOS process, demonstrate a variation of less than 0.3% of the extracted value of VT for a supply voltage in the range 1-3.6 V.
  • Keywords
    CMOS integrated circuits; low-power electronics; AMS BiCMOS process; MOS threshold voltage extractor; low current consumption; low-voltage CMOS voltage extractor; low-voltage supply operation; negative feedback; second-order factors; size 0.35 mum; voltage 1 V to 3.6 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070917
  • Filename
    4293096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103250