Title :
Low-voltage CMOS VT extractor
Author :
Vlassis, S. ; Psychalinos, Costas
Author_Institution :
Univ. of Patras, Rio
Abstract :
A new and accurate MOS threshold voltage (VT) extractor is proposed. The principle of operation is based on a novel negative feedback that reduces the effects caused by second-order factors and supply voltage variations. The advantages of the circuit against previous implementations are true low-voltage supply operation and low current consumption capabilities. Simulation results, based on the 0.35 mum AMS BiCMOS process, demonstrate a variation of less than 0.3% of the extracted value of VT for a supply voltage in the range 1-3.6 V.
Keywords :
CMOS integrated circuits; low-power electronics; AMS BiCMOS process; MOS threshold voltage extractor; low current consumption; low-voltage CMOS voltage extractor; low-voltage supply operation; negative feedback; second-order factors; size 0.35 mum; voltage 1 V to 3.6 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070917