Blue lasing at room temperature in an optically pumped lattice-matched AlInN=GaN VCSEL structure

Author

Feltin, E. ; Christmann, G. ; Dorsaz, J. ; Castiglia, A. ; Carlin, J.-F. ; Butté, R. ; Grandjean, N. ; Christopoulos, S. ; Baldassarri, G. ; Von Högersthal, Höger ; Grundy, A.J.D. ; Lagoudakis, P.G. ; Baumberg, J.J.

Author_Institution

Inst. of Quantum Electron. & Photonics, Lausanne

Volume

43

Issue

17

fYear

2007

Firstpage

924

Lastpage

926

Abstract

Laser action with low threshold average pump power density (~50 W - cm^-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10^-10 is derived for this ready-to-be-processed laser structure.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; optical pumping; quantum well lasers; surface emitting lasers; wide band gap semiconductors; DBR; VCSEL structure; blue lasing; distributed Bragg reflector; emission coupling factor; optical pumping; quantum wells; ready-to-be-processed laser structure; vertical cavity surface emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20071226

Filename

4293098