Title :
IVB-2 Inversion layer mobility of MOSFET´s with Nitrided Oxide gate dielectrics
Author :
Schmidt, M.A. ; Senturia, S.D.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Annealing; Capacitance-voltage characteristics; Degradation; Dielectrics; Doping; Electron mobility; Electron traps; Laboratories; MOSFETs; Oxidation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22348
