Title :
IVB-5 Degradation behavior of dynamically stressed n-MOSFET´s
fDate :
11/1/1985 12:00:00 AM
Keywords :
Charge carrier processes; Charge transfer; Degradation; Electron devices; Electron emission; Hydrogen; Instruments; MOSFET circuits; Passivation; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22350
