Title :
230W C-band GaN-FET power amplifier
Author :
Okamoto, Y. ; Nakayama, T. ; Ando, Y. ; Wakejima, A. ; Matsunaga, K. ; Ota, K. ; Miyamoto, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, Otsu
Abstract :
A C-band high-power amplifier with two GaN-based FET chips exhibits record output powers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier delivers a CW 208 W output power with 11.9 dB linear gain and 34% power-added efficiency. It also shows a pulsed 232 W output power with 8.3 dB linear gain.
Keywords :
III-V semiconductors; field effect MMIC; gallium compounds; microwave power amplifiers; C-band FET power amplifier; continuous-wave operation; efficiency 34 percent; frequency 5 GHz; gain 11.9 dB; gain 8.3 dB; high-power amplifier; power 208 W; power 230 W; pulsed operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071855
