DocumentCode
1103308
Title
Coaxial transitions for CPW-to-CPW flip chip interconnects
Author
Wu, W.C. ; Chang, E.Y. ; Huang, C.H. ; Hsu, L.H. ; Starski, J.P. ; Zirath, H.
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
Volume
43
Issue
17
fYear
2007
Firstpage
929
Lastpage
930
Abstract
A novel coaxial transition for CPW-to-CPW flip chip interconnect is presented and experimentally demonstrated. To realise the coaxial transition on the CPW circuit, benzocyclobutene was used as the interlayer dielectric between the vertical coaxial transition and the CPW circuit. The coaxial interconnect structure was successfully fabricated and RF characterised to 67 GHz. The structure showed excellent interconnect performance from DC up to 55 GHz with low return loss below 20 dB and low insertion loss less than 0.5 dB even when the underfill was applied to the structure.
Keywords
dielectric devices; flip-chip devices; CPW-to-CPW flip chip interconnects; benzocyclobutene; coaxial interconnect; coaxial transitions; interlayer dielectric; vertical coaxial transition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20071696
Filename
4293101
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