DocumentCode :
1103323
Title :
VA-1 measuring barrier heights in GaAs-AlGaAs and metal-AlGaAs junctions by internal photoemission
Author :
Heiblum, M. ; Nathan, M.I.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2545
Lastpage :
2545
Keywords :
Electrons; Gallium arsenide; Giant magnetoresistance; HEMTs; Heterojunctions; MESFETs; MODFETs; Magnetic materials; National electric code; Photoelectricity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22353
Filename :
1485099
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103323
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