Title :
VA-2 magnetoresistance techniques for determining mobility profiles in GaAs MESFET and AlxGa1-xAs/GaAs MODFET devices
Author :
Look, D.C. ; Norris, George B
fDate :
11/1/1985 12:00:00 AM
Keywords :
Contact resistance; Electrical resistance measurement; Epitaxial growth; Gallium arsenide; Giant magnetoresistance; HEMTs; MESFETs; MODFETs; National electric code; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22354
