DocumentCode :
1103344
Title :
VA-3 n
+
Contact n-AlGaAs/GaAs 2DEG FET´s by selective epitaxy
Author :
Miyamoto, Hideaki ; Ohata, Katsuki ; Toyoshima, Hisashi ; Suzuki, Kenji ; Itoh, Hayato ; Sunakawa, H. ; Usui, A. ; Ogawa, Michiko
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2545
Lastpage :
2545
Keywords :
Electrons; Gallium arsenide; Giant magnetoresistance; HEMTs; Heterojunctions; MESFETs; MODFETs; Magnetic materials; National electric code; Photoelectricity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22355
Filename :
1485101
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103344
