Title :
VA-4 ultrahigh transconductance AlGaAs/GaAs heterostructure transistors by hole injection
Author :
Ohata, Katsuki ; Hida, Hirotaka ; Miyamoto, Hideaki ; Ogawa, Michiko
fDate :
11/1/1985 12:00:00 AM
Keywords :
Contact resistance; Electron devices; Gallium arsenide; HEMTs; Laboratories; MODFETs; Microelectronics; National electric code; Temperature; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22356
