Title :
VA-6 temperature-dependent properties of the double HBJT
Author :
Tiwari, Sunita ; Wright, S.L. ; Kleinsasser, A.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Contact resistance; Current density; Doping; Gallium arsenide; Implants; Rapid thermal annealing; Temperature distribution; Thermal resistance; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22358
