DocumentCode
1103387
Title
VA-7 self-aligned substitutional emitter process for GaAs/(GaAl)As heterojunction bipolar transistors
Author
Chang, M.F. ; Asbeck, P.M. ; Miller, Douglas L. ; Wang, K.C.
Volume
32
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
2547
Lastpage
2547
Keywords
Bipolar transistors; Contact resistance; Etching; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Implants; Lithography; Materials science and technology; Resists;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22359
Filename
1485105
Link To Document