• DocumentCode
    1103389
  • Title

    Analysis of probability and energy of nanometre CMOS circuits in presence of noise

  • Author

    Korkmaz, P. ; Akgul, B.E.S. ; Palem, K.V.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta
  • Volume
    43
  • Issue
    17
  • fYear
    2007
  • Firstpage
    942
  • Lastpage
    943
  • Abstract
    Motivated by the necessity to consider probabilistic approaches to future designs, probability and switching energy characteristics of probabilistic CMOS (PCMOS) circuits are analysed. Using 90 and 65 nm processes, detailed analytical models for the probability of correctness (p) of these circuits are developed and verified through circuit simulations.
  • Keywords
    CMOS integrated circuits; probability; nanometre CMOS circuits; presence noise; probabilistic CMOS circuits; probability analysis; switching energy characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070638
  • Filename
    4293109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103389