Title :
Analysis of probability and energy of nanometre CMOS circuits in presence of noise
Author :
Korkmaz, P. ; Akgul, B.E.S. ; Palem, K.V.
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
Motivated by the necessity to consider probabilistic approaches to future designs, probability and switching energy characteristics of probabilistic CMOS (PCMOS) circuits are analysed. Using 90 and 65 nm processes, detailed analytical models for the probability of correctness (p) of these circuits are developed and verified through circuit simulations.
Keywords :
CMOS integrated circuits; probability; nanometre CMOS circuits; presence noise; probabilistic CMOS circuits; probability analysis; switching energy characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070638
